2SD1280 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1280 Datasheet PDF : 3 Pages
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Transistor
PC — Ta
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
1.0
the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — IB
1.2
VCE=2V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
hFE — IC
600
VCE=2V
500
400
300
Ta=75˚C
25˚C
–25˚C
200
100
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
IC — VCE
1.2
Ta=25˚C
1.0
0.8
IB=5.0mA
4.5mA
4.0mA
0.6
3.5mA
3.0mA
2.5mA
0.4
2.0mA
1.5mA
1.0mA
0.2
0.5mA
0
0
0.4 0.8 1.2 1.6 2.0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=20
30
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
fT — IE
200
VCB=6V
Ta=25˚C
175
150
125
100
75
50
25
0
–1
–3
–10
–30
–100
Emitter current IE (mA)
2SD1280
IC — VCE(sat)
1.2
Ta=25˚C
IC/IB=10 20
1.0
0.8
0.6
0.4
0.2
0
0
0.1 0.2 0.3 0.4 0.5
Collector to emitter saturation voltage VCE(sat) (V)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1 Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Cob — VCB
50
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
1
3
10
30
100
Collector to base voltage VCB (V)
2
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