2SD1624(2011) 데이터 시트보기 (PDF) - Unisonic Technologies
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2SD1624 Datasheet PDF : 5 Pages
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2SD1624
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
Collector Power Dissipation( Tc=25°C)
VEBO
6
V
PC
500
mW
Collector Current
Junction Temperature
Storage Temperature
DC
IC
3
A
PULSE
ICP
6
A
TJ
150
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC=10μA, IE=0
60
Collector-Emitter Breakdown Voltage
BVCEO IC=1mA, RBE=∞
50
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
6
Collector-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=100mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=2A, IB=100mA
Collector Cut-Off Current
ICBO
VCB=40V, IE=0
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE
VCE=2V, Ic=100mA
100
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
Output Capacitance
COB
VCE=10V, f=1MHz
Turn-ON Time
tON
See test circuit
Storage Time
tSTG See test circuit
Fall Time
tF
See test circuit
CLASSIFICATION OF hFE
RANK
RANGE
R
100-200
S
140-280
T
200-400
TYP
0.19
0.94
150
25
70
650
35
MAX
0.5
1.2
1
1
560
UNIT
V
V
V
V
V
μA
μA
MHz
pF
ns
ns
ns
U
280-560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-005.D
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