2SD1834 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD1834 Datasheet PDF : 3 Pages
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Medium Power Transistor (60V, 1A)
2SD1834
Features
1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)
2) High input impedance.
Inner circuit
C
B
Dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
E
B : Base
C : Collector
E : Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCES
60
Emitter-base voltage
VEBO
7
Collector current
1
IC
2
Collector power dissipation
PC
0.5
2 ∗3
Junction temperature
Tj
150
Storage temperature
Tstg −55 to +150
∗1 Single pulse Pw=100ms
∗2 RBE=0Ω
∗3 Mounted on a 40×40× t 0.7mm ceramic substrate
Unit
V
V
∗2
V
A(DC)
A(Pulse) ∗1
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
60
−
−
V
IC=50μA
BVCEO
60
−
−
V
IC=100μA , RBE=0Ω
Emitter-base breakdown voltage
BVEBO
7
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
1
μA VCB=60V
Emitter cutoff current
IEBO
−
−
1
μA VEB=6V
DC current transfer ratio
hFE
2000
−
−
−
VCE/IC=3V/500mA
∗
Collector-emitter saturation voltage
VCE(sat)
−
0.9
1.5
V
IC/IB=500mA/500μA
Transition frequency
fT
−
150
−
MHz VCE=5V , IE= −10mA , f=100MHz
Output capacitance
Cob
−
7
−
pF VCE=10V , IE=0A , f=1MHz
∗ Measured using pulse current.
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
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