D2081 데이터 시트보기 (PDF) - Inchange Semiconductor

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D2081

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2081

DESCRIPTION

·High DC Current Gain-

: hFE= 2000(Min)@ (VCE= 4V, IC= 5A)

·Large Current Capability

·Complement to Type 2SB1259

APPLICATIONS

·Driver for solenoid, motor and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Pulse

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1

A

30

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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