2SD2414 데이터 시트보기 (PDF) - Toshiba
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2SD2414 Datasheet PDF : 5 Pages
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2SD2414(SM)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
100
V
80
V
5
V
7
A
1
A
1.5
W
40
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10S2A
Note: Using continuously under heavy loads (e.g. the application of
Weight: 1.4 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-11-11
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