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2SD2414 데이터 시트보기 (PDF) - Toshiba
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2SD2414
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SD2414 Datasheet PDF : 5 Pages
1
2
3
4
5
V
BE (sat)
– I
C
5
Common emitter
3
IC/IB = 10
1
Tc =
−
55°C
0.5
25
100
0.3
0.1
0.02
0.1
0.3
1
3
10
Collector current I
C
(A)
Safe Operating Area
IC max (pulsed)*
10
5 IC max
(continuous)
3
DC operation
Tc = 25°C
1
1 ms*
10 ms*
100 ms*
0.5
0.3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
13
5
10
VCEO max
30 50
100
Collector-emitter voltage VCE (V)
2SD2414(SM)
I
C
– V
BE
8
Common emitter
VCE = 1 V
6
4
2
Tc = 100°C
−
55
25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V
BE
(V)
4
2009-11-11
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