2SD2331 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2331 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.8A
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition frequency
VCB=800V IE=0
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
VF
Diode forward voltage
IF=3.5A
Product Specification
2SD2331
MIN TYP. MAX UNIT
5
V
3.0
5.0
V
1.5
V
10
μA
8
3
MHz
2.0
V
2
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