2SD2391 데이터 시트보기 (PDF) - TY Semiconductor

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2SD2391

Medium Power Transistor

TY Semiconductor 

SMD Type

Transistors

Product specification

2SD2391

Features

Low saturation voltage.

Collector-emitter voltage =60V.

PC=2 W (on 40 40 0.7mm ceramic board) .

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

60

V

VCEO

60

V

VEBO

6

V

IC

2

A

PC

0.5

W

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

Symbol

Testconditons

BVCBO IC=50ìA

BVCEO IC=1mA

BVEBO IE=50ìA

ICBO VCB=50V

IEBO VEB=5V

VCE(sat) IC=1A, IB=50mA

hFE VCE=-2V, IC=-0.5A

fT VCE=2V, IE= -0.5A, f=100MHz

Cob VCB=10V, IE=0A, f=1MHz

Min Typ Max Unit

60

V

60

V

6

V

0.1 ìA

0.1 ìA

0.13 0.35 V

120

270

210

MHz

21

pF

Marking

Marking

DTQ

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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