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2SD748A 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD748A
Silicon NPN Power Transistors
Inchange Semiconductor
2SD748A Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD748
2SD748A
I
C
=10mA ;R
BE
=
∞
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=5mA ;I
C
=0
V
CEsat
Collector-emitter saturation voltage I
C
=3A; I
B
=0.6A
V
BE
Base-emitter on voltage
I
C
=1A ; V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=200V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
Product Specification
2SD748 2SD748A
MIN TYP. MAX UNIT
200
V
250
5
V
1.0
V
1.5
V
1.0
mA
1.0
mA
25
200
2
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