2SJ412 데이터 시트보기 (PDF) - Toshiba
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2SJ412 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
0.5
Common source
Pulse test
0.4
ID = −8 A
−4
−8
0.3
0.2 VGS = −4 V
−2, −4
−2
0.1
VGS = −10 V
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
5000
3000
1000
Ciss
500
300
Coss
Common source
100 VGS = 0 V
f = 1 MHz
50
Crss
Tc = 25°C
30
−0.1 −0.3
−1
−3
−10
−30
−100
Drain-source voltage VDS (V)
2SJ412
IDR – VDS
−30
Common source
Tc = 25°C
Pulse test
−10
−5
VGS = −10 V
−3
−1.0
−0.5
−0.3
0
−3
−2
−5
−1
0, 1
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
Vth – Tc
−4
Common source
VDS = −10 V
ID = −1 mA
Pulse test
−3
−2
−1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
80
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input/Output Characteristic
−100
−80
−20
Common source
ID = −16 A
Tc = 25°C
Pulse test
−16
VDS
−60
−40
−20 V
VDD = −80 V
−12
−40 V
−8
−20
0
0
VGS
20
40
60
80
Total gate charge Qg (nC)
−4
0
100
4
2009-09-29
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