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2SJ496 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ496
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ496 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
I
D
= –5 A
–0.4
–2 A
–0.2
–1 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V
GS
(V)
2SJ496
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
0.05
V
GS
= –4 V
–10 V
0.02
0.01
–0.1
–0.3 –1 –3
Drain Current
Pulse Test
–10 –30 –100
I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
I
D
= –5 A
–2 A
0.2
V
GS
= –4 V
0.1
–10 V
–1 A
–5 A
–1, –2 A
0
–40
0
40 80 120 160
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
20
10
Ta = –25
°
C
5
25
°
C
2
75
°
C
1
0.5
0.1
–0.1
–0.2 –0.5 –1
Drain Current
V
DS
= –10 V
Pulse Test
–2 –5 –10
I
D
(A)
5
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