2SJ504 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SJ504

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ504

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.042Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

TO–220FM

D

G

S

ADE-208-546

Target specification 1st. Edition

123

1. Gate

2. Drain

3. Source

Share Link: