Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
2SJ518 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
부품명
상세내역
제조사
2SJ518
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ518 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SJ518
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
–3
–10 V
–2
–5 V
V
GS
= 0, 5 V
–1
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
0.5
I
AP
= –2 A
0.4
V
DD
= –25 V
duty < 0.1 %
Rg > 50
Ω
0.3
0.2
0.1
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
–15 V
Avalanche Test Circuit
V
DS
Monitor
Rg
50
Ω
L
I
AP
Monitor
D. U. T
V
DD
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
2
AP
•
V
DSS
V
DSS
– V
DD
I
AP
I
D
V
(BR)DSS
V
DS
V
DD
0
7
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]