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2SJ539 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ539
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ539 Datasheet PDF : 9 Pages
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2SJ539
Silicon P Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.16
Ω
typ.
•
Low drive current
•
4 V gete drive devices
•
High speed switching
Outline
ADE-208-657A (Z)
2nd. Edition
Jun 1998
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