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2SJ551 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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상세내역
제조사
2SJ551
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ551 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SJ551(L),2SJ551(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3.0
Pulse Test
–2.5
–2.0
–1.5
I
D
= –20 A
–1.0
–0.5
–10 A
–5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
V
GS
= –4 V
0.05
–10 V
0.02
0.01
–1
–2 –5 –10 –20 –50 –100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.30
Pulse Test
0.25
0.20
0.15
I
D
= –20 A
–5, –10 A
0.10 V
GS
= –4 V
0.05
0
–40
–10 V
–5, –10, –20 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
25 °C
3
75 °C
1
0.3
0.1
–0.1
–0.3 –1 –3
Drain Current
V
DS
= –10 V
Pulse Test
–10 –30 –100
I
D
(A)
4
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