2SK1162 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK1162

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1161, 2SK1162

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source

2SK1161 V(BR)DSS 450

breakdown voltage 2SK1162

500

Gate to source breakdown

voltage

V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltage 2SK1161 IDSS

—

drain current

2SK1162

Gate to source cutoff voltage VGS(off) 2.0

Static Drain to source 2SK1161 RDS(on) —

on state resistance 2SK1162

—

Forward transfer admittance |yfs|

4.0

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward

VDF

—

voltage

Body to drain diode reverse

t rr

—

recovery time

Note: 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

3.0

V

0.6

0.8

Ω

0.7

0.9

7.0

—

S

1050 —

pF

280 —

pF

40

—

pF

15

—

ns

60

—

ns

90

—

ns

45

—

ns

1.0

—

V

350 —

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 5 A, VGS = 10 V *1

ID = 5 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 5 A, VGS = 10 V,

RL = 6 Ω

IF = 10 A, VGS = 0

IF = 10 A, VGS = 0,

diF/dt = 100 A/µs

See characteristic curves of 2SK1157, 2SK1158.

3

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