2SK3069 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK3069

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3069

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note 1

D(pulse)

I DR

I Note 3

AP

E Note 3

AR

Pch Note 2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Ratings

Unit

60

V

±20

V

75

A

300

A

75

A

50

A

214

mJ

100

W

150

°C

–55 to +150

°C

2

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