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60N08G-TF1-T 데이터 시트보기 (PDF) - Unisonic Technologies

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60N08G-TF1-T
UTC
Unisonic Technologies UTC
60N08G-TF1-T Datasheet PDF : 6 Pages
1 2 3 4 5 6
60N08
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
80
V
Gate to Source Voltage
VGSS
±25
V
Continuous Drain Current Continuous
ID
Pulsed
IDM
60
A
176
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
560
mJ
8.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
6.5
V/ns
TO-220
Power Dissipation
TO-220F1
PD
100
W
70
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F1
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
1.25
1.77
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-521.a

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