GS881E18AT-250IT 데이터 시트보기 (PDF) - Giga Semiconductor

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GS881E18AT-250IT

512K x 18, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

Preliminary

GS881E18/36AT-250/225/200/166/150/133

Flow Through Read-Write Cycle Timing

Single Read

Single Write

Burst Read

CK

ADSP

tS tH

tKC

tKH tKL

ADSP is blocked by E inactive

tS tH ADSC initiated read

ADSC

tS tH

ADV

A0-An

tS tH

RD1

WR1

RD2

GW

tS tH

tS

tH

BW

BA - BD

tS tH

WR1

tS tH

E1

E1 masks ADSP

G

DQA–DQD

tOE tOHZ

tKQ

Hi-Z

Q1A

tS tH

D1A

Q2A

Q2B

Q2c Q2D Q2A

Burst wrap around to it’s initial state

Rev: 1.01 3/2002

19/34

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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