PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 3
7
5
Tj=125°C
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 –1
0.5
1.5
2.5
3.5
4.5
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7
5 VGT=3.0V
PGM=5.0W
3
2
PG(AV)=
0.50W
10 0
IGT=
50mA
7
5 Tj=
3 25°C
2
10 –1
VGD=0.25V
7
5
410 1 2 3 5 710 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
40
35
PER SINGLE
180°
ELEMENT
30
90° 120°
25
60°
θ=30°
20
15
θ
10
360°
5
RESISTIVE,
INDUCTIVE
LOAD
0
0
5
10
15
20
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
500
400
300
200
100
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 7 10 1
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
130
PER SINGLE
ELEMENT
120
θ
110
100
360°
RESISTIVE,
INDUCTIVE
LOAD
90
80
70
θ=30° 60° 90° 120° 180°
60
50
0
5
10
15
20
AVERAGE ON-STATE CURRENT (A)
Feb.1999