Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-243AA
-630mA
-3.3A
Power Dissipation
@ TA = 25°C
1.6W†
θjc
°C/W
15
*
I
D
(continuous)
is
limited
by
max
rated
Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate.
D
TP2502
θja
°C/W
78†
IDR*
-630mA
IDRM
-3.3A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSS
Drain-to-Source
Breakdown Voltage
-20
V
VGS(th)
∆VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-1.0
-2.4
V
3.0
4.5 mV/°C
-100
nA
-100
µA
-10
mA
ID(ON)
ON-State Drain Current
-0.4 -0.7
A
-2.0 -3.3
RDS(ON)
Static Drain-to-Source
ON-State Resistance
2.0
3.5
Ω
1.5
2.0
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.75
1.2 %/°C
0.3 0.65
125
70
pF
25
10
11
ns
15
12
-1.3 -2.0
V
300
ns
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Conditions
VGS = 0V, ID = -2.0mA
VGS = VDS, ID= -1.0mA
VGS = VDS, ID= -1.0mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -5.0V, VDS = -15V
VGS = -10V, VDS = -15V
VGS = -5.0V, ID = -250mA
VGS = -10V, ID = -1.0A
VGS = -10V, ID = -1.0A
VDS = -15V, ID = -1.0A
VGS = 0V, VDS = -20V
f = 1.0 MHz
VDD = -20V,
ID = -1.0A,
RGEN = 25Ω
VGS = 0V, ISD = -1.5A
VGS = 0V, ISD = -1.5A
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
2
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD