29104BJA 데이터 시트보기 (PDF) - Intersil
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29104BJA Datasheet PDF : 7 Pages
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HM-65162
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Thermal Information
Thermal Resistance
θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . . 48
8
CLCC Package . . . . . . . . . . . . . . . . . . 66
12
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65162S-9, HM-65162B-9,
HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . . -40oC to +85oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB1 Standby Supply Current
ICCSB
ICCEN
ICCOP
Standby Supply Current
Enabled Supply Current
Operating Supply Current (Note 1)
ICCDR Data Retention Supply Current
VCCDR Data Retention Supply Voltage
-
50
µA
HM-65162B-9, IO = 0mA,
E = VCC - 0.3V, VCC = 5.5V
-
100
µA
HM-65162S-9, HM65162-9,
IO = 0mA, E = VCC - 0.3V,
VCC = 5.5V
-
900
µA
HM-65162C-9, IO = 0mA,
E = VCC - 0.3V, VCC = 5.5V
-
8
mA
E = 2.2V, IO = 0mA, VCC = 5.5V
-
70
mA
E = 0.8V, IO = 0mA, VCC = 5.5V
-
70
mA
E = 0.8V, IO = 0mA, f = 1MHz,
VCC = 5.5V
-
20
µA
HM-65162B-9, IO = 0mA,
VCC = 2.0V, E = VCC - 0.3V
-
40
µA
HM-65162S-9, HM-65162-9,
IO = 0mA, VCC = 2.0V,
E = VCC - 0.3V
-
300
µA
HM-65162C-9, IO = 0mA,
VCC = 2.0V, E = VCC - 0.3V
2.0
-
V
II
IIOZ
VIL
VIH
VOL
VOH1
VOH2
Input Leakage Current
Input/Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
-1.0
-1.0
-0.3
2.2
-
2.4
VCC -0.4
+1.0
+1.0
0.8
VCC +0.3
0.4
-
-
µA
VI = VCC or GND, VCC = 5.5V
µA
VIO = VCC or GND, VCC = 5.5V
V
VCC = 4.5V
V
VCC = 5.5V
V
IO = 4.0mA, VCC = 4.5V
V
IO = -1.0mA, VCC = 4.5V
V
IO = -100µA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CIO
Input/Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
10
12
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
3
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