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M48Z35-70PC1TR 데이터 시트보기 (PDF) - STMicroelectronics

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M48Z35-70PC1TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48Z35-70PC1TR Datasheet PDF : 18 Pages
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M48Z35, M48Z35Y
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
Parameter
CIN
Input Capacitance
CIO (3) Input / Output Capacitance
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max
Unit
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Test Condition
ILI (1)
Input Leakage Current
0V VIN VCC
ILO (1) Output Leakage Current
0V VOUT VCC
ICC
Supply Current
Outputs open
ICC1
Supply Current (Standby) TTL
E = VIH
ICC2
Supply Current (Standby) CMOS
E = VCC – 0.2V
VIL (2) Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1mA
VOH
Output High Voltage
IOH = –1mA
Note: 1. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
Min
–0.3
2.2
2.4
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Min
Typ
VPFD Power-fail Deselect Voltage (M48Z35)
4.5
4.6
VPFD Power-fail Deselect Voltage (M48Z35Y)
4.2
4.35
VSO
Battery Back-up Switchover Voltage (M48Z35/35Y)
3.0
tDR (2) Expected Data Retention Time
10
Note: 1. All voltages referenced to VSS.
2. At 25 °C.
Max
±1
±5
50
3
3
0.8
VCC + 0.3
0.4
Max
4.75
4.5
Unit
µA
µA
mA
mA
mA
V
V
V
V
Unit
V
V
V
YEARS
5/18

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