AM29LV008T-120FC 데이터 시트보기 (PDF) - Advanced Micro Devices

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AM29LV008T-120FC

8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

Advanced Micro Devices 

PRELIMINARY

Figure 20, Alternate CE Controlled Write Operation

Timings:

Changed 5555H to 555H in addresses waveform to

match command definitions (Table 5).

Erase and Programming Performance:

Added typical chip erase specification. Renamed

erase/program cycles specification to erase/program

endurance. Corrected to indicate 1,000,000 cycle en-

durance is typical, not maximum, and that 100,000

cycle endurance is minimum, not typical. Revised Note

1 to include write endurance; moved Note 1 references

in table to table head. Consolidated and moved Note 1

and Note 3 references in table to table head. Combined

Note 2 and Note 5 into new Note 1, which applies to the

entire table; revised to indicate that DQ5=1 after any

maximum time. Comments for program and erase now

straddle parameter rows. Separated the two sentences

in Note 4 into new Notes 4 and 5; added corresponding

note references to comment section.

Am29LV008T/Am29LV008B

39

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