AM29LV081B-90EEB 데이터 시트보기 (PDF) - Advanced Micro Devices

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AM29LV081B-90EEB

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

REVISION SUMMARY

Revision B

Expanded data sheet from Advanced Information to

Preliminary version.

Distinctive Characteristics

Changed “Manufactured on 0.35 µm process technology”

to “Manufactured on 0.32 µm process technology”.

General Description

Second paragraph: Changed “This device is manufac-

tured using AMD’s 0.35 µm process technology” to

“This device is manufactured using AMD’s 0.32 µm

process technology”.

Revision C

Distinctive Characteristics

Added:

s 20-year data retention at 125°C

— Reliable operation for the life of the system

Ordering Information

Valid Combinations: Replaced Am29LV081B-100 with

Am29LV081B-90.

DC Characteristics—CMOS Compatible

ICC1, ICC2, ICC3, ICC4, ICC5: Added Note 2 “Maximum

ICC specifications are tested with VCC = VCCmax”.

Revision C+1

Global

In title of data sheet and in ordering information sec-

tion, changed “sector erase” to “uniform sector.”

Revision D (November 19, 1999)

AC Characteristics—Figure 15. Program

Operations Timing and Figure 16. Chip/Sector

Erase Operations

Deleted tGHWL and changed OE# waveform to start at

high.

Physical Dimensions

Replaced figures with more detailed illustrations.

Corrected “TSR048—48-Pin Reverse TSOP” to

“TSR040—40-Pin Reverse TSOP”.

Trademarks

Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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Am29LV081B

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