AOB416(2009) 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOB416 Datasheet PDF : 7 Pages
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AOB416
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2.8 3.4
4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
130
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
30
36
mΩ
54
65
VGS=7V, ID=15A
34
43 mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
28
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.68 1
V
IS
Maximum Body-Diode Continuous Current
100 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
950 1180 1450 pF
77 110 145 pF
21
36
50
pF
0.4 0.8 1.2
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
16
20
24
nC
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
5.5
7
8.5 nC
Qgd
Gate Drain Charge
3.5 6.3
9
nC
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5Ω,
7
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
15
ns
tf
Turn-Off Fall Time
7
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
13
19
25
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
50
70
90
nC
A. The value of RθJΑ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2009
www.aosmd.com
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