29LV160-120 데이터 시트보기 (PDF) - Alliance Semiconductor

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29LV160-120

3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

Alliance Semiconductor 

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:RUGE\WH FRQILJXUDWLRQ

JEDEC

Symbol Std Symbol

- tELFL/tELFH

- tFLQZ

- tFHQZ

Parameter

CE to BYTE switching Low or High

BYTE switching Low to output High-Z

BYTE switching High to output Active

-70/80/90/120

Min

Max

-

10

-

30

80

-

%<7( UHDG ZDYHIRUP

CE

OE

Word

to

Byte

BYTE

DQ0-DQ14

DQ15/A-1

Byte

to

Word

BYTE

DQ0-DQ14

DQ15/A-1

tELFL

tELFH

DQ0-DQ14

Data output

DQ15 output

tFLQZ

DQ0-DQ7

Data output

Address input

DQ0-DQ7

Data output

Address input

tFHQV

DQ0-DQ14

Data output

DQ15 output

%<7( ZULWH ZDYHIRUP

CE

WE

BYTE

tSET

See Erase/Program operations table for tAS and tAH specifications.

(tAS)

falling edge of last WE signal

tHOLD (tAH)

6HFWRU SURWHFWXQSURWHFW

VID

RESET# VIH

SA, A6,

A1, A0

DATA

CE#

WE#

Don’t care

Valid*

Sector protect/unprotect

60h

60h

1 µs

Don’t care

Don’t care

Sector protect: 100 µs

Sector unprotect: 10 ms

Valid*

Verify

40h

Don’t care

Don’t care

$6/9

Unit

ns

ns

ns

Valid*

Status

OE#

8/30/01; V.0.9.5

* For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0.

$OOLDQFH 6HPLFRQGXFWRU

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