AS7C1025 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS7C1025

5V/3.3V 128Kx8 CMOS SRAM (Revolutionary pinout)

Alliance Semiconductor 

®

Write cycle (over the operating range)11

Parameter

Write cycle time

Chip enable (CE) to write end

Address setup to write end

Address setup time

Write pulse width

Address hold from end of write

Data valid to write end

Data hold time

Write enable to output in high Z

Output active from write end

Shaded areas contain advance information.

Symbol

tWC

tCW

tAW

tAS

tWP

tAH

tDW

tDH

tWZ

tOW

-12

Min Max

12 –

8

–

8

–

0

–

8

–

0

–

6

–

0

–

–

5

3

–

-15

Min Max

15 –

12 –

12 –

0

–

9

–

0

–

8

–

0

–

–

5

3

–

-20

Min Max

20

–

12

–

12

–

0

–

12

–

0

–

12

–

0

–

–

5

3

–

Write waveform 1 ( WE controlled)10,11

Address

tWC

tAW

tWP

WE

tAS

DIN

tWZ

DOUT

tAH

tDW

tDH

Data valid

tOW

Write waveform 2 (CE controlled)10,11

tWC

tAW

Address

tAS

tCW

CE

tWP

WE

tWZ

DIN

DOUT

tDW

Data valid

tAH

tDH

AS7C1025

AS7C31025

Unit

Notes

ns

ns

ns

ns

ns

ns

ns

ns

4, 5

ns

4, 5

ns

4, 5

3/23/01; v.1.0

Alliance Semiconductor

P. 5 of 9

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