AT-42086-BLKG 데이터 시트보기 (PDF) - Avago Technologies

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AT-42086-BLKG

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago Technologies 

AT-42086 Absolute Maximum Ratings

Symbol

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Parameter

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature

Storage Temperature

Absolute

Units

Maximum[1]

Thermal Resistance[2]:

θjc = 140°C/W

V

1.5

Notes:

V

20

1. Permanent damage may occur if any

of these limits are exceeded.

V

12

2. TCASE = 25°C.

mA

80

3. Derate at 7.1 mW/°C for TC > 80°C.

mW

500

°C

150

°C

-65 to 150

Electrical Specifications, TA = 25°C

Symbol

|S 21E| 2

Parameters and Test Conditions

Insertion Power Gain; VCE = 8 V, IC = 35 mA

P1 dB

G1 dB

Power Output @ 1 dB Gain Compression

VCE = 8 V, IC = 35 mA

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

fT

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

ICBO

Collector Cutoff Current; VCB = 8 V

IEBO

Emitter Cutoff Current; VEB = 1 V

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

Note:

1. For this test, the emitter is grounded.

f = 1.0 GHz

f = 2.0 GHz

f = 4.0 GHz

f = 2.0 GHz

f= 4.0 GHz

f = 2.0 GHz

f = 4.0 GHz

f = 2.0 GHz

f = 4.0 GHz

f = 2.0 GHz

f = 4.0 GHz

Units Min. Typ. Max.

dB 15.0

dBm

dB

dB

dB

GHz

—

30

µA

µA

pF

16.5

10.5

4.5

20.5

20.0

13.5

9.0

1.9

3.5

13.0

9.0

8.0

150 270

0.2

2.0

0.32

2

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