ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
Symbol
VBR
IRM
Rd
R1
R2
R3
Cline
IR = 1 mA
VRM = 3V
@ 0V
Test conditions
EMIF03-SIM01
Min. Typ. Max. Unit
6
V
1
µA
1.5
Ω
95
100 105
Ω
44.65
47
49.35
Ω
95
100 105
Ω
35
pF
TECHNICAL INFORMATION
FREQUENCY BEHAVIOR
The EMIF03-SIM01 is firstly designed as an EMI
/ RFI filter. This low-pass filter is characterized
by the following parameters:
- Cut-off frequency
- Insertion loss
- High frequency rejection
Figure A1shows that attenuation is better than
-20dB at mobile phone frequencies (800MHz to
2.5GHz).
Fig. A1: Frequency response curve
0.00
dB
-5.00
Aplac 7.60 User: STMicroelectronics Feb 22 2001
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
100.0k
1.0M
B3_B1(CLK)
10.0M
f/Hz
A3_A2(RST)
100.0M
1.0G
C3_C1(DAT)
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