ATA6617 데이터 시트보기 (PDF) - Atmel Corporation
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ATA6617 Datasheet PDF : 308 Pages
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Atmel ATA6616/ATA6617
3.8 Electrical Characteristics (Continued)
5V < VS < 27V, –40°C < Tcase < 125°C, –40°C < Tj < 150°C, unless otherwise specified. All values refer to GND pins
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit Type*
4 EN Input Pin
4.1 Low-level voltage input
4.2 High-level voltage input
EN
VENL
–0.3
EN
VENH
2
+0.8
V
A
VCC +
0.3V
V
A
4.3 Pull-down resistor
VEN = VCC
4.4 Low-level input current VEN = 0V
5 NTRIG Watchdog Input Pin
EN
REN
EN
IEN
50
125
200
kΩ
A
–3
+3
µA
A
5.1 Low-level voltage input
5.2 High-level voltage input
NTRIG
NTRIG
VNTRIGL
VNTRIGH
–0.3
2
+0.8
V
A
VCC +
0.3V
V
A
5.3 Pull-up resistor
5.4
High-level leakage
current
VNTRIG = 0V
VNTRIG = VCC
NTRIG RNTRIG
125
250
400
kΩ
A
NTRIG INTRIG
–3
+3
µA
A
6 Mode Input Pin
6.1 Low-level voltage input
6.2 High-level voltage input
MODE
MODE
VMODEL
VMODEH
–0.3
2
+0.8
V
A
VCC +
0.3V
V
A
6.3 Leakage current
7 INH Output Pin
VMODE = VCC or
VMODE = 0V
MODE
IMODE
–3
+3
µA
A
7.1 High-level voltage
7.2
Switch-on resistance
between VS and INH
IINH = –15mA
INIT
VINHH VS – 0.75
VS
INIT
RINH
30
50
V
A
Ω
A
7.3 Leakage current
Sleep Mode
VINH = 0V/27V, VS = 27V
INIT
IINHL
–3
+3
µA
A
LIN Bus Driver: Bus Load Conditions:
8
Load 1 (Small): 1nF, 1kΩ; Load 2 (Large): 10nF, 500Ω; RRXD = 5kΩ; CRXD = 20pF;
Load 3 (Medium): 6.8 nF, 660Ω Characterized on Samples; 10.6 and 10.7 Specifies the Timing Parameters for Proper
Operation at 20 Kbit/s, 10.8 and 10.9 at 10.4 Kbit/s.
8.1
Driver recessive output
voltage
Load1/Load2
LIN
VBUSrec 0.9 × VS
VS
V
A
8.2
Driver dominant voltage
VVS = 7V
Rload = 500Ω
8.3
Driver dominant voltage
VVS = 18V
Rload = 500Ω
8.4
Driver dominant voltage
VVS = 7.0V
Rload = 1000Ω
8.5
Driver dominant voltage
VVS = 18V
Rload = 1000Ω
8.6 Pull-up resistor to VS
The serial diode is
mandatory
LIN
V_LoSUP
1.2
V
A
LIN
V_HiSUP
2
V
A
LIN V_LoSUP_1k
0.6
V
A
LIN
V_HiSUP_1k
0.8
V
A
LIN
RLIN
20
30
60
kΩ
A
8.7
Voltage drop at the serial In pull-up path with Rslave
diodes
ISerDiode = 10mA
LIN
VSerDiode
0.4
1.0
V
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
21
9132D–AUTO–12/10
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