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ATA6629-TAQY 데이터 시트보기 (PDF) - Atmel Corporation

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ATA6629-TAQY Datasheet PDF : 26 Pages
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ATA6629/ATA6631
9. Electrical Characteristics (Continued)
5V < VS < 27V, –40°C < Tj < 150°C; unless otherwise specified all values refer to GND pins.
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit Type*
7.1 Output voltage VCC
5.5V < VS < 18V
(0 mA to 50 mA)
VCC
VCCnor
4.9
5.1
V
A
7.2
Output voltage VCC at
low VS
4V < VS < 5.5V
VCC
VCClow VVS – VD
5.1
V
A
7.3 Regulator drop voltage VS > 4V, IVCC = –20 mA
VCC
VD1
250
mV
A
7.4 Regulator drop voltage VS > 4V, IVCC = –50 mA
VCC
VD2
400
600
mV
A
7.5 Regulator drop voltage VS > 3.3V, IVCC = –15 mA VCC
VD3
200
mV
A
7.6
Line regulation
maximum
5.5V < VS < 18V
VCC
VCCline
0.1
0.2
%
A
7.7
Load regulation
maximum
5 mA < IVCC < 50 mA
VCC VCCload
0.1
0.5
%
A
7.8
Power supply ripple
rejection
10 Hz to 100 kHz
CVCC = 10 µF
VS = 14V, IVCC = –15 mA
50
dB
D
7.9 Output current limitation VS > 5.5V
VCC
IVCCs
–240 –160
–85
mA
A
7.10 Load capacity
0.2Ω < ESR < 5Ω at
100 kHz
VCC
Cload
1.8
10
µF
D
7.11
VCC undervoltage
threshold
Referred to VCC
VS > 5.5V
VCC
VthunN
4.2
4.8
V
A
7.12
Hysteresis of
undervoltage threshold
Referred to VCC
VS > 5.5V
VCC Vhysthun
250
mV
A
7.13
Ramp up time VS > 5.5V CVCC = 2.2 µF
to VCC = 5V
Iload = –5 mA at VCC
VCC
TVCC
320
500
µs
A
LIN Bus Driver: Bus Load Conditions:
8
Load 1 (Small): 1 nF, 1 kΩ; Load 2 (Large): 10 nF, 500Ω; Internal Pull-up RRXD = 5 kΩ ; CRXD = 20 pF, Load 3 (Medium): 6.8
nF, 660Ω characterized on samples
10.7 and 10.8 Specifies the Timing Parameters for Proper Operation at 20 kBit/s and 10.9 and 10.10 at 10,4 kBit/s
8.1
Driver recessive output
voltage
Load1/Load2
LIN
VBUSrec 0.9 × VS
VS
V
A
8.2
Driver dominant voltage
VVS = 7V
Rload = 500Ω
8.3
Driver dominant voltage
VVS = 18V
Rload = 500Ω
8.4
Driver dominant voltage
VVS = 7V
Rload = 1000Ω
8.5
Driver dominant voltage
VVS = 18V
Rload = 1000Ω
8.6 Pull–up resistor to VS
The serial diode is
mandatory
LIN
V_LoSUP
1.2
V
A
LIN
V_HiSUP
2
V
A
LIN V_LoSUP_1k
0.6
V
A
LIN
V_HiSUP_1k
0.8
V
A
LIN
RLIN
20
30
47
kΩ
A
8.7
Voltage drop at the serial In pull-up path with Rslave
diodes
ISerDiode = 10 mA
LIN
VSerDiode
0.4
1.0
V
D
8.8
LIN current limitation
VBUS = VBatt_max
LIN
IBUS_LIM
40
120
200
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
19
9165B–AUTO–05/10

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