BC182LA 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
BC182LA Datasheet PDF : 2 Pages
| |||
BC182LA
SILICON NPN SMALL SIGNAL TRANSISTOR
BVCEO . . . . 50 V (Min)
hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA
1 23
BCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
-55 Degrees C to 150 Degrees C
Operating Junction Temperature
150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
625 mW
VOLTAGES & CURRENT
VCEO
Collector to Emitter
VCBO
Collector to Base
VEBO
Emitter to Base
IC
Collector Current
50 V
60 V
5V
500 mA
DISCRETE POWER & SIGNAL
TECHNOLOGIES
1
23
0.135 - 0.145
(3.429 - 3.683)
0.175 - 0.185
(4.450 - 4.700)
LOGOXYY
BC
182LA
0.175 - 0.185
(4.450 - 4.700)
SEATING
PLANE
0.500
(12.70)
MIN
0.016 - 0.021
(0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
CHARACTERISTICS
MIN MAX UNITS TEST CONDITIONS
BVCBO
Collector to Base Voltage
60
V
BVCEO
Collector to Emitter Voltage
50
V
BVEBO
Emitter to Base Voltage
5
V
ICBO
Collector Cutoff Current
15 nA
IEBO
Emitter Cutoff Current
15 nA
hFE
DC Current Gain
40
80
VCE(sat) Collector-Emitter Saturation Voltage
0.25 V
0.6
V
VBE(sat) Base-Emitter Saturation Voltage
1.2
V
VBE(on) Base -Emitter On Voltage
0.55 0.7
V
IC = 10 uA
IC = 2.0 mA
IE = 10 uA
VCB = 50 V
VEB = 4.0 V
VCE = 5.0 V IC = 10 uA
VCE = 5.0 V IC = 100 mA
IC = 10mA IB = 0.5mA
IC = 100mA IB = 5.0mA
IC = 100mA IB = 5.0mA
VCE = 5.0 V IC = 2mA
1998 Fairchild Semiconductor Corporation
Page 1 of 2
Pr10/1094
Share Link: 