BC807-16W(2018) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BC807-16W
(Rev.:2018)

SMD General Purpose PNP Transistors

Diotec Semiconductor Germany  

BC807W ... BC808W

Characteristics

DC current gain – Kollektor-Basis-Stromverhältnis 1)

Tj = 25°C

- VCE = 1 V, - IC = 100 mA

Group -16

Group -25

hFE

Group -40

- VCE = 1 V, - IC = 500 mA

hFE

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

- IC = 500 mA, - IB = 50 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VCEsat

- VCE = 1 V, - IC = 500 mA

- VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 20 V, (E open)

- VCB = 20 V, Tj = 125°C, (E open)

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- ICBO

- VEB = 4 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

- IEBO

- VCE = 5 V, - IC = 10 mA, f = 50 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, - IE =ie = 0, f = 1 MHz

CCBO

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

Min.

Kennwerte

Typ.

Max.

100

–

250

160

–

400

250

–

600

40

–

–

–

–

0.7 V

–

–

1.2 V

–

–

100 nA

–

–

5 µA

–

–

100 nA

80 MHz

–

–

–

–

12 pF

< 625 K/W 2)

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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