NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
−10
VBEsat
(V)
−1
(1)
(2)
(3)
006aaa122
−10
VBEsat
(V)
−1
(1)
(2)
(3)
006aaa123
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4.
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5.
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
−10
006aaa124
VBEsat
(V)
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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