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BC847ATT1(2004) 데이터 시트보기 (PDF) - ON Semiconductor

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BC847ATT1
(Rev.:2004)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BC847ATT1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage
VCEO
45
V
Collector−Base Voltage
VCBO
50
V
Emitter−Base Voltage
VEBO
6.0
V
Collector Current − Continuous
IC
100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
200
mW
1.6 mW/°C
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
PD
RqJA
300
mW
2.4 mW/°C
400 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to
°C
+150
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SC−75/SOT−41
6
STYLE 1
MARKING DIAGRAM
xxM
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 1
Publication Order Number:
BC847ATT1/D

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