BC847ATT1(2004) 데이터 시트보기 (PDF) - ON Semiconductor
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BC847ATT1 Datasheet PDF : 6 Pages
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BC847ATT1, BC847BTT1, BC847CTT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
BC847 Series
45
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
V(BR)CES
BC847 Series
50
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
BC847 Series
50
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
BC847 Series
6.0
−
Collector Cutoff Current (VCB = 30 V)
ICBO
−
−
(VCB = 30 V, TA = 150°C)
−
−
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC847A
BC847B
BC847C
hFE
−
90
−
150
−
270
(IC = 2.0 mA, VCE = 5.0 V)
BC847A
BC847B
BC847C
110
180
200
290
420
520
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
VBE(sat)
−
0.7
−
0.9
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VBE(on)
580
660
−
−
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
−
Noise Figure
NF
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
−
Max
Unit
V
−
V
−
V
−
V
−
15
nA
5.0
mA
−
−
−
−
220
450
800
0.25
V
0.6
−
V
−
700
mV
770
−
MHz
4.5
pF
dB
10
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