BF1100R 데이터 시트보기 (PDF) - Philips Electronics
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BF1100R Datasheet PDF : 14 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF1100
BF1100R
storage temperature
operating junction temperature
CONDITIONS
MIN.
−
−
−
−
see Fig.3
up to Tamb = 50 °C; note 1 −
up to Tamb = 40 °C; note 1 −
−65
−
Note
1. Device mounted on a printed-circuit board.
MAX.
14
30
±10
±10
200
200
+150
+150
UNIT
V
mA
mA
mA
mW
mW
°C
°C
250
handbook, halfpage
Ptot
(mW)
200
MLD155
150
BF1100R BF1100
100
50
0
0
50
100
150
200
Tamb (oC)
Fig.3 Power derating curves.
40
Yfs
(mS)
30
MLD156
20
10
0
50
0
50
100
150
Tj (oC)
Fig.4 Forward transfer admittance as a function
of junction temperature; typical values.
1995 Apr 25
3
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