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BF1005S 데이터 시트보기 (PDF) - Siemens AG
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BF1005S
Silicon N-Channel MOSFET Tetrode
Siemens AG
BF1005S Datasheet PDF : 4 Pages
1
2
3
4
BF 1005S
Total power dissipation
P
tot
=
f
(
T
S
)
Drain current
I
D
=
f
(
V
G2S
)
300
mW
200
150
100
50
0
0
20 40 60 80 100 120
°C
150
T
S
Insertion power gain
|
S
21
|
2
=
f
(
V
G2S
)
20
mA
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V
G2S
Forward transfer admittance
|
Y
21
| =
f
(
V
G2S
)
5
40
mS
dB
32
-15
28
24
-25
20
-35
16
-45
-55
-65
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V
G2S
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V
G2S
SSeemmicioconndduuctcotor
rGGrorouupp
3
3
Au
1
-2
99
5
8
-1
-1
9
1
9
-0
8
1
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