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BF1005W 데이터 시트보기 (PDF) - Infineon Technologies

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BF1005W
Infineon
Infineon Technologies Infineon
BF1005W Datasheet PDF : 5 Pages
1 2 3 4 5
BF1005...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5V
Integrated biasing network
AGC
G2
HF
G1
Input
Drain
HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1005
BF1005R
BF1005W*
Package
Pin Configuration
SOT143 1=S 2=D 3=G2 4=G1 -
-
SOT143R 1=D 2=S 3=G1 4=G2 -
-
SOT343 1=D 2=S 3=G1 4=G2 -
-
* on request only
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF1005, BF1005R
TS 94 °C, BF1005W
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
25
10
3
200
200
-55 ... 150
150
Marking
MZs
MZs
MZ
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
Feb-18-2004

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