BF1210 데이터 시트보기 (PDF) - Philips Electronics
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BF1210 Datasheet PDF : 21 Pages
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
001aaf478
(1)
(2)
(3)
60
(4)
40
20
0
0
(5)
(6)
(7)
0.5
1.0
1.5
2.0
VG1-S (V)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS(A) = 5 V; Tj = 25 °C.
Fig 4. Amplifier A: gate1 current as a function of
gate1 voltage; typical values
20
ID
(mA)
16
001aaf480
12
8
4
36
Yfs
(mS)
24
001aaf479
(1)
(2)
(3)
12
(4)
(7)
0
0
(5)
(6)
12
24
36
ID (mA)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS(A) = 5 V; Tj = 25 °C.
Fig 5. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
15
001aaf481
10
5
0
0
20
40
60
IG1 (µA)
0
0
1
2
3
4
5
VGG (V)
VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 6. Amplifier A: drain current as a function of gate1
current; typical values
VDS(A) = 5 V; VG2-S = 4 V; RG1(A) = 59 kΩ; Tj = 25 °C.
Fig 7. Amplifier A: drain current as a function of gate1
supply voltage (VGG); typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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