NXP Semiconductors
BF1118(R); BF1118W(R)
Silicon RF switches
4. Marking
Table 4. Marking
Type number
BF1118
BF1118R
BF1118W
BF1118WR
Marking code
VC%
VD%
VB
VC
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
FET
VDS
VSD
VDG
VSG
ID
Diode
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
VR
reverse voltage
IF
forward current
FET and diode
Tstg
storage temperature
Tj
junction temperature
6. Thermal characteristics
Min Max Unit
-
3
V
-
3
V
-
7
V
-
7
V
-
10
mA
-
35
V
-
100 mA
−65 +150 °C
-
150 °C
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
[1] Soldering point of FET gate and diode anode lead.
Typ
[1] 250
Unit
K/W
BF1118_1118R_1118W_1118WR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 June 2010
© NXP B.V. 2010. All rights reserved.
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