BF858 데이터 시트보기 (PDF) - Philips Electronics

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BF858

NPN high-voltage transistor

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BF857; BF858; BF859

DESCRIPTION

NPN transistors in a TO-202 plastic package.

An A-version with e-b-c pinning instead of e-c-b is

available on request.

APPLICATIONS

• For use in video output stages of black and white and

colour television receivers.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to mounting base

3

base

handbook, halfpage

1 23

MBH794

Fig.1 Simplified outline (TO-202) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BF857

BF858

BF859

VCEO

collector-emitter voltage

BF857

BF858

BF859

ICM

peak collector current

Ptot

total power dissipation

hFE

DC current gain

Cre

feedback capacitance

fT

transition frequency

CONDITIONS

open emitter

open base

Tmb ≤ 75 °C

IC = 30 mA; VCE = 10 V

IC = ic = 0; VCE = 30 V; f = 1 MHz

IC = 15 mA; VCE = 10 V; f = 100 MHz

MIN. MAX. UNIT

−

160

V

−

250

V

−

300

V

−

160

V

−

250

V

−

300

V

−

300

mA

−

6

W

26

−

−

3

pF

90

−

MHz

1996 Dec 09

2

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