Philips Semiconductors
NPN high-voltage transistors
Product specification
BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF857
BF858
BF859
collector-emitter voltage
BF857
BF858
BF859
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Tmb ≤ 75 °C
MIN. MAX. UNIT
−
160
V
−
250
V
−
300
V
−
160
V
−
250
V
−
300
V
−
5
V
−
100
mA
−
300
mA
−
100
mA
−
2
W
−
6
W
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
62.5
12.5
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
ICBO
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
BF857
collector cut-off current
BF858
collector cut-off current
BF859
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 100 V
−
IE = 0; VCB = 200 V
−
IE = 0; VCB = 250 V
−
IC = 0; VEB = 5 V
−
IC = 30 mA; VCE = 10 V
26
IC = 30 mA; IB = 6 mA
−
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
IC = 15 mA; VCE = 10 V; f = 100 MHz 90
MAX. UNIT
0.1
µA
0.1
µA
0.1
µA
100
nA
−
1
V
3
pF
−
MHz
1996 Dec 09
3