BF995A(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BF995A Datasheet PDF : 7 Pages
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BF995
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
96 12159
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
22
20
VG1S= 0.6V
18
16
0.4V
14
0.2V
12
10
0
8
–0.2V
6
–0.4V
4
–0.6V
2
–0.8V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
96 12160
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
24
22
VDS=15V
20 IDS=10mA
18
VG1S=0.5V
16
0V
14
12
10
8
6
–0.5V
4
2
0
–2 –1 0 1 2 3 4 5 6
96 12161
VG2S – Gate 2 Source Voltage ( V )
Figure 3. Forward Transadmittance vs.
Gate 2 Source Voltage
22
20 VDS=15V
18 f=1MHz
VG2S=5V
16
14
12
10
8
4V
6
0V
4
3V
2
2V
1V
0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
96 12162
VG1S – Gate 1 Source Voltage ( V )
Figure 4. Forward Transadmittance vs.
Gate 1 Source Voltage
4.0
3.5
3.0
VDS=15V
2.5
VG2S=4V
f=1MHz
2.0
1.5
1.0
0.5
0
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
96 12163
VG1S – Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
4.0
3.6
VDS=15V
3.2
VG1S=0
f=1MHz
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
–2 –1 0 1 2 3 4 5 6 7
96 12164
VG2S – Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
Document Number 85009
Rev. 3, 20-Jan-99
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