BFP420F(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFP420F
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

SIEGET
25 BFP420F

NPN Silicon RF Transistor

Preliminary data

For high gain low noise amplifiers

Smallest Package 1.4 x 0.8 x 0.59mm

Noise figure F = 1.1 dB at 1.8 GHz

outstanding Gma = 20 dB at 1.8 GHz

3

2

4

1

Transition frequency fT = 25 GHz

Gold metallization for high reliability

TSFP-4

SIEGET  25 GHz fT - Line

to p v ie w

"

!

AM s



d ire c tio n o f u n re e lin g

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP420F

Marking

AMs

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
111°C 1)

Junction temperature

Ambient temperature

Storage temperature

Symbol

VCEO

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Value

4.5

15

1.5

35

3

160

150

-65 ... 150

-65 ... 150

Unit

V

mA

mW

°C

Thermal Resistance

Junction - soldering point2)

RthJS

1TS is measured on the emitter lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

240

K/W

1

Dec-07-2001

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