BFP420F(2001) 데이터 시트보기 (PDF) - Infineon Technologies
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BFP420F Datasheet PDF : 4 Pages
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SIEGET25 BFP420F
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 4 V
V(BR)CEO 4.5
ICBO
-
IEBO
-
hFE
50
5
-V
- 200 nA
-
35 µA
80 150 -
AC characteristics (verified by random sampling)
Transition frequency
fT
18 25
- GHz
IC = 30 mA, VCE = 3 V, f = 2 GHz
Collector-base capacitance
Ccb
- 0.15 0.3 pF
VCB = 2 V, f = 1 MHz
Collector-emitter capacitance
Cce
- 0.33 -
VCE = 2 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
0.5
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
-
1.1
- dB
IC = 5 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum available 1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt ,
f = 1.8 GHz
Insertion power gain
Gma
|S21|2
-
20
-
-
17
-
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50
Third order intercept point at output2)
IC = 20 mA, VCE = 2 V, ZS=ZL=50 ,
f = 1.8 GHz
IP3
-
24
- dBm
1dB Compression point at output3)
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS=ZL=50
P-1dB
- 10.5 -
1Gma = |S21 / S12| (k-(k2-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 from 0.1MHz to 6GHz.
3DC current no input power
2
Dec-07-2001
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