BFP520F 데이터 시트보기 (PDF) - Infineon Technologies
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BFP520F Datasheet PDF : 9 Pages
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BFP520F
Low profile high gain silicon NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Parameter
Thermal resistance
Junction - soldering point
130
mW
Symbol
RthJS
Values
Unit
Min. Typ. Max.
–
430 –
K/W
Note or test condition
–
100
80
60
40
20
Figure 1
00 15 30 45 60 75
Total power dissipation Ptot = f(TS)
90 105 120 °C 150
TS
Datasheet
4
Revision 2.0
2019-01-25
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