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BS62LV4006SI 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS62LV4006SI
Very Low Power CMOS SRAM 512K X 8 bit
Brilliance Semiconductor
BS62LV4006SI Datasheet PDF : 12 Pages
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Revision History
Revision No. History
1.2
To add Icc1 characteristic parameter
To improve Iccsb1 spec.
I-grade from 60uA to 20uA at 5.0V
10uA to 4.0uA at 3.0V
C-grade from 30uA to 10uA at 5.0V
5.0uA to 2.0uA at 3.0V
1.3
To Add 400 mil TSOP II package type
1.4
Change I-grade operation temperature range
- from
–
25
O
C to
–
40
O
C
BS62LV4006
Draft Date
Jan. 13, 2006
Remark
March 20, 2006
May. 25, 2006
R0201-BS62LV4006
12
Revision 1.4
May.
2006
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