BSS159 데이터 시트보기 (PDF) - Siemens AG

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BSS159

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 159

Preliminary data

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain-source breakdown voltage

VGS = -10 V, ID = 250 µA

Gate threshold voltage

VDS = 3 V, ID = 10 µA

Drain-source cutoff current

VDS = 50 V, VGS = -10 V, Tj = 25 °C

VDS = 50 V, VGS = -10 V, Tj = 125 °C

On-state drain current

VGS = 0 V, VDS = 10 V

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 0 V, ID = 0.07 A

Symbol

min.

V(BR)DSV

50

VGS(th)

-3

IDSV

-

-

ID(on)

70

IGSS

-

RDS(on)

-

Values

typ.

max.

-

-

-2.5

-1.5

-

1

-

-

200

-

10

100

4

8

Unit

V

µA

mA

nA

Ω

Semiconductor Group

2

May-30-1996

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